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Infineon Technologies IPB067N08N3 G
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IPB067N08N3 G
Manufacturers: Infineon Technologies
Qty: 8411
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Description: MOSFET N-CH 80V 80A TO263-3
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Product Information:
Packaging:Cut Tape (CT) Alternate Packaging
Series:TrenchFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Rds On (Max) @ Id, Vgs:11.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.6V @ 250μA
Gate Charge (Qg) @ Vgs:45nC @ 10V
Input Capacitance (Ciss) @ Vds:1675pF @ 15V
Power - Max:5.4W
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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